DIFFERENCES IN THE ELECTRICAL-PROPERTIES OF THE INTERFACES OF PECVD SILICON-NITRIDE WITH AMORPHOUS AND CRYSTALLINE SILICON

被引：3

作者：

HABRARD, MC

BENSOUDA, M

BRUYERE, JC

JOUSSE, D

机构：

[1] LEPES-CNRS, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 115卷 / 1-3期

关键词：

Silicon Nitride;

D O I：

10.1016/0022-3093(89)90355-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：45 / 47

页数：3

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