DIFFERENCES IN THE ELECTRICAL-PROPERTIES OF THE INTERFACES OF PECVD SILICON-NITRIDE WITH AMORPHOUS AND CRYSTALLINE SILICON

被引：3
|
作者：
HABRARD, MC
BENSOUDA, M
BRUYERE, JC
JOUSSE, D
机构：
[1] LEPES-CNRS, France
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 115卷 / 1-3期
关键词：
Silicon Nitride;
D O I：
10.1016/0022-3093(89)90355-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：45 / 47
页数：3
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