A CALCULATION OF THE DENSITY OF ELECTRONIC STATES FOR AMORPHOUS-SEMICONDUCTORS

被引：1

|

作者：

BEEBY, JL ^{[1
]}

HAYES, TM ^{[1
]}

机构：

[1] COLORADO SCH MINES,DEPT PHYS,GOLDEN,CO 80401

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90128-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

下载

收藏

页码：253 / 255

页数：3

相关论文

共 50 条

[41] CALCULATING THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
HAYES, TM
BEEBY, JL
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 55 - 56
[42] AMORPHOUS-SEMICONDUCTORS
LONG, AR
NATURE, 1977, 268 (5619) : 399 - 400
[43] AMORPHOUS-SEMICONDUCTORS
TAUC, J
PHYSICS TODAY, 1976, 29 (10) : 23 - &
[44] DENSITY OF STATES OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS IN TIGHT-BINDING APPROXIMATION
YONEZAWA, F
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 459 - 459
[45] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577
[46] THERMOSTIMULATED CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS WITH NON-EXPONENTIAL DENSITY OF LOCALIZED STATES
XU, ZY
YANG, HG
GU, BY
COMMUNICATIONS IN THEORETICAL PHYSICS, 1988, 10 (03) : 269 - 274
[47] AMORPHOUS-SEMICONDUCTORS
REYNOLDS, S
BELFORD, RE
PHYSICS IN TECHNOLOGY, 1987, 18 (05): : 193 - 203
[48] THEORETICAL CALCULATIONS OF DEFECT STATES IN AMORPHOUS-SEMICONDUCTORS
JOANNOPOULOS, JD
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 781 - 792
[49] SEMICLASSICAL DENSITY-OF-STATES AND OPTICAL-ABSORPTION ANALYSIS OF AMORPHOUS-SEMICONDUCTORS
OLEARY, SK
ZUKOTYNSKI, S
PERZ, JM
PHYSICAL REVIEW B, 1995, 51 (07): : 4143 - 4149
[50] A STUDY OF THE DENSITY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS FROM THERMOSTIMULATED CONDUCTIVITY SPECTRA
ZHU, MF
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (05): : 285 - 288

← 1 2 3 4 5 →