A STUDY OF THE DENSITY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS FROM THERMOSTIMULATED CONDUCTIVITY SPECTRA

A theoretical analysis of thermostimulated conductivity spectra sigma-TSC(T) has been applied to determine the density of gap states g(E) in a-Si:H and a-Si:H/a-SiN(x):H multilayer structures. The results for g(E) are consistent with the results deduced from Fritzsche's analytical approach as well as other methods. A comparison has been made between the two different analytical approaches for sigma-TSC(T). We discuss the relationship between the energy of maximum thermostimulated current emission E(m) and quasi-Fermi level E(q). We demonstrate that E(q) could be a better parameter than E(m) in the general theoretical treatment of thermostimulated conductivity.