A CALCULATION OF THE DENSITY OF ELECTRONIC STATES FOR AMORPHOUS-SEMICONDUCTORS

被引：1

|

作者：

BEEBY, JL ^{[1
]}

HAYES, TM ^{[1
]}

机构：

[1] COLORADO SCH MINES,DEPT PHYS,GOLDEN,CO 80401

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90128-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

下载

收藏

页码：253 / 255

页数：3

相关论文

共 50 条

[31] PHOTOLUMINESCENCE AND TAIL STATES IN AMORPHOUS-SEMICONDUCTORS
SEARLE, TM
JACKSON, WA
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 571 - 576
[32] TRANSIENT PHOTODECAY MEASUREMENTS AS A PROBE OF THE DENSITY OF LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
SILVER, M
SNOW, E
ADLER, D
SOLID STATE COMMUNICATIONS, 1985, 53 (08) : 637 - 640
[33] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[34] LOCALIZATION AND ELECTRONIC-PROPERTIES IN AMORPHOUS-SEMICONDUCTORS
MORT, J
KNIGHTS, J
NATURE, 1981, 290 (5808) : 659 - 663
[35] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - AN INTRODUCTION
SCHIFF, EA
DISORDERED SOLIDS: STRUCTURES AND PROCESSES, 1989, 46 : 153 - 194
[36] ELECTRONIC PROPERTIES OF SUBSTITUTIONALLY DOPED AMORPHOUS-SEMICONDUCTORS
SPEAR, WE
THIN SOLID FILMS, 1979, 58 (02) : 299 - 299
[37] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SEMICONDUCTORS - INTRODUCTION
OVERHOF, H
THOMAS, P
SPRINGER TRACTS IN MODERN PHYSICS, 1989, 114 : 1 - 167
[38] NUCLEAR-SPIN-LATTICE RELAXATION BY LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
JELLISON, GE
BISHOP, SG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 310 - 310
[39] AMORPHOUS-SEMICONDUCTORS
EMIN, D
SCIENCE, 1977, 198 (4320) : 881 - 881
[40] TOPOLOGICAL AND ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
MEEK, PE
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (04): : L59 - L62

← 1 2 3 4 5 →