LOCALIZATION AND ELECTRONIC-PROPERTIES IN AMORPHOUS-SEMICONDUCTORS

被引：20

作者：

MORT, J ^{[1
]}

KNIGHTS, J ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

NATURE | 1981年 / 290卷 / 5808期

关键词：

D O I：

10.1038/290659a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：659 / 663

页数：5

共 50 条

[1] THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
MORGAN, GJ
BURR, JN
BRUCE, NA
HICKEY, BJ
HOLENDER, JM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 149 - 152
[2] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - AN INTRODUCTION
SCHIFF, EA
[J]. DISORDERED SOLIDS: STRUCTURES AND PROCESSES, 1989, 46 : 153 - 194
[3] CALCULATING THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
HAYES, TM
BEEBY, JL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 55 - 56
[4] NEW MODEL FOR THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
JOHNSTON, R
KRAMER, B
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 59 - 62
[5] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - TOPOLOGY LATTICE EFFECTS
LATGE, A
MAKLER, SS
ANDA, EV
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 51 - 54
[6] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - LATTICE TOPOLOGY EFFECTS
LATGE, A
MAKLER, SS
ANDA, EV
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 141 (01): : 163 - 171
[7] ELECTRONIC-PROPERTIES AND BAND SCHEMES IN AMORPHOUS-SEMICONDUCTORS .2. ELECTRONIC TRANSPORT
MOLITON, A
RATIER, B
[J]. ANNALES DE PHYSIQUE, 1991, 16 (03) : 305 - 344
[8] ELECTRONIC PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
FORNAZERO, J
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (05): : 695 - 695
[9] MODEL FOR ELECTRONIC PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
ECONOMOU, EN
NGAI, KL
REINECKE, TL
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (03) : 157 - 160
[10] TRENDS IN DEFECT-CONTROLLED ELECTRONIC-PROPERTIES OF GROUP-V AMORPHOUS-SEMICONDUCTORS
ELLIOT, SR
DAVIS, EA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 849 - 854

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