THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS

被引：1
|
作者：
MORGAN, GJ
BURR, JN
BRUCE, NA
HICKEY, BJ
HOLENDER, JM
机构：
[1] Department of Physics, University of Leeds, Leeds
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
关键词：
D O I：
10.1016/S0022-3093(05)80078-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present new theoretical and computational results for the density of states in amorphous Si for comparison purposes. There is reasonable agreement between the calculations but the 'gap' contains too many defects states due to undercoordinated atoms.
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页码：149 / 152
页数：4
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