LOCALIZATION AND ELECTRONIC-PROPERTIES IN AMORPHOUS-SEMICONDUCTORS

被引：20

作者：

MORT, J ^{[1
]}

KNIGHTS, J ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

NATURE | 1981年 / 290卷 / 5808期

关键词：

D O I：

10.1038/290659a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：659 / 663

页数：5

共 50 条

[21] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[22] POLYTOPE MODEL AND THE ELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1985, 32 (06) : 3974 - 4000
[23] THE SCALING THEORY OF LOCALIZATION - IS IT OF IMPORTANCE FOR AMORPHOUS-SEMICONDUCTORS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 253 - 256
[24] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[25] DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
DAVIS, EA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 113 - 123
[26] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SEMICONDUCTORS - INTRODUCTION
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[J]. SPRINGER TRACTS IN MODERN PHYSICS, 1989, 114 : 1 - 167
[27] SINGLE AND PAIR ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
NGAI, KL
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ECONOMOU, EN
[J]. PHYSICAL REVIEW B, 1978, 17 (02) : 790 - 806
[28] A CALCULATION OF THE DENSITY OF ELECTRONIC STATES FOR AMORPHOUS-SEMICONDUCTORS
BEEBY, JL
HAYES, TM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 253 - 255
[29] ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
OKAMOTO, H
HAMAKAWA, Y
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 23 - 27
[30] TOPOLOGICAL AND ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
MEEK, PE
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (04): : L59 - L62

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