ENHANCEMENT OF NITROGEN INCORPORATION IN ZNSE GROWN ON MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
NISHIKAWA, Y
ISHIKAWA, M
SAITO, S
HATAKOSHI, G
机构：
[1] Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3A期
关键词：
ZNSE; MISORIENTED SUBSTRATE; MOLECULAR BEAM EPITAXY; NITROGEN; ELECTRICAL ACTIVITY; NITROGEN INCORPORATION;
D O I：
10.1143/JJAP.33.L361
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitrogen incorporation and electrical activity have been investigated for ZnSe grown on GaAs substrates (100) oriented and misoriented 15-degrees toward the [011] direction, by molecular beam epitaxy. It was found that nitrogen incorporation in the 15-degrees misoriented case was enhanced by a factor of two compared with that on the (100) oriented substrate. Electrical activity was unity for nitrogen concentration Up to 1 X 10(18) cm-3, then was falling for both substrates. This result indicates that electrical activity is determined only by nitrogen concentration in the layer and is not affected by the substrate orientation.
引用
收藏
页码：L361 / L364
页数：4
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