TIME-RESOLVED LUMINESCENCE OF GAAS/ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES

被引：5
|
作者：
COLOCCI, M [1 ]
GURIOLI, M [1 ]
VINATTIERI, A [1 ]
DEPARIS, C [1 ]
MASSIES, J [1 ]
NEU, G [1 ]
机构：
[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期
关键词：
D O I：
10.1063/1.103419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of GaAs substrate misorientation from the (001) plane on the photoluminescence spectra of GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy have been investigated using time-resolved spectroscopy. It is shown, by comparison with a (001) heterostructure having a high impurity content, that the broadening of photoluminescence spectra, observed when the substrate misorientation is towards the (111)As plane, is very unlikely due to a preferential impurity incorporation but is rather originated from the growth mechanism on this type of surface.
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页码：783 / 785
页数：3
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