THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES

被引：15
|
作者：
ZHANG, XM
PASHLEY, DW
KAMIYA, I
NEAVE, JH
JOYCE, BA
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,ROYAL SCH MINES,DEPT MAT,LONDON SW7 2BP,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(95)00736-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Molecular beam epitaxy (MBE) growth of GaAs buffer layer and subsequent deposition of InAs layers on GaAs (110) misoriented by 1.5 degrees towards (111) A are studied using transmission electron microscopy. The observations show that step bunching occurred during the buffer layer growth. InAs is found to nucleate and grow on the bunched step edges.
引用
收藏
页码：234 / 237
页数：4
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