HETEROEPITAXIAL GROWTH OF INAS ON MISORIENTED GAAS(111)B SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

TAKANO, Y ^{[1
]}

IKEI, T ^{[1
]}

HACHIYA, Y ^{[1
]}

KISHIMOTO, Y ^{[1
]}

PAK, K ^{[1
]}

YONEZU, H ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL, DEPT ELECT & ELECTR ENGN, TOYOHASHI 441, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期

关键词：

INAS ON GAAS; MOLECULAR BEAM EPITAXY; SURFACE LATTICE STRAIN RELAXATION; TWIN; MISORIENTED SUBSTRATE;

D O I：

10.1143/JJAP.31.L1223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epilayers of InAs without twins were grown on 0.5-degrees-misoriented GaAs(111)B substrates by molecular beam epitaxy. For a 2-mu-m-thick InAs epilayer, the full width at half-maximum of the X-ray rocking curve as low as 200 arcsec was obtained by using two-step growth in spite of 7% lattice mismatch. During InAs growth, the reflection high-energy electron diffraction pattern remained streaked without showing extra spots. This behavior was different from that observed in the InAs growth on GaAs(100), where spotty patterns were observed in the initial growth stage.

引用

页码：L1223 / L1225

页数：3

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