GROWTH OF GAAS, ALGAAS, AND INGAAS ON (111)B GAAS BY MOLECULAR-BEAM EPITAXY

被引：28
|
作者：
ELCESS, K
LIEVIN, JL
FONSTAD, CG
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584376
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：638 / 641
页数：4
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