27 GBIT/S ALGAAS GAAS HBT 1-2 REGENERATING DEMULTIPLEXER IC

被引：4
|
作者：
RUNGE, K [1 ]
GIMLETT, JL [1 ]
NUBLING, RB [1 ]
WANG, KC [1 ]
CHANG, MF [1 ]
PIERSON, RL [1 ]
ASBECK, PM [1 ]
机构：
[1] ROCKWELL INT CORP,INT SCI CTR,THOUSAND OAKS,CA 91360
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
DEMULTIPLEXERS; INTEGRATED CIRCUITS; DIGITAL COMMUNICATIONS;
D O I：
10.1049/el:19911478
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experimental 27 Gbit/s 1:2 regenerating demultiplexer IC based on AlGaAs/GaAs HBTs has been implemented, which features an input sensitivity of 55 mV peak to peak and a phase margin of 270-degrees at the SONET STS-192 rate of 9.95 Gbit/s. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15 x 1 mm2.
引用
收藏
页码：2389 / 2391
页数：3
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