10 GBIT/S ALGAAS/GAAS HBT DRIVER IC FOR LASERS OR LIGHTWAVE MODULATORS

被引：17

作者：

MONTGOMERY, RK ^{[1
]}

REN, F ^{[1
]}

ABERNATHY, CR ^{[1
]}

FULLOWAN, TR ^{[1
]}

KOPF, RF ^{[1
]}

SMITH, PR ^{[1
]}

PEARTON, SJ ^{[1
]}

WISK, P ^{[1
]}

LOTHIAN, J ^{[1
]}

NOTTENBURG, RN ^{[1
]}

NGUYEN, TV ^{[1
]}

BOSCH, F ^{[1
]}

机构：

[1] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 20期

关键词：

SEMICONDUCTOR DEVICES; INTEGRATED CIRCUITS;

D O I：

10.1049/el:19911135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 10 Gbit/s driver IC for lasers or lightwave modulators has been implemented using carbon-doped base AlGaAs/GaAs HBTs. The integrated circuit is intended for applications involving either direct or external modulation of laser sources. The circuit is capable of driving 60 mA into a 50-OMEGA load with rise/fall times of 40 ps and generates a differential output voltage of 6 V peak to peak at 10 Gbit/s. Modifying the design slightly, a 9 V peak to peak differential output was achieved at 5 Gbit/s by switching 90 mA into a 50-OMEGA load.

引用

页码：1827 / 1829

页数：3

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