20 GBIT/S ALGAAS GAAS HBT DECISION CIRCUIT IC

被引：2

作者：

RUNGE, K ^{[1
]}

GIMLETT, JL ^{[1
]}

NUBLING, RB ^{[1
]}

WANG, KC ^{[1
]}

CHANG, MF ^{[1
]}

PIERSON, RL ^{[1
]}

ASBECK, PM ^{[1
]}

机构：

[1] ROCKWELL INT CORP,INT SCI CTR,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; DECISION CIRCUITS;

D O I：

10.1049/el:19911471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental 20 Gbit/s decision circuit IC based on AlGaAs/GaAs HBTs has been implemented, which features a differential input sensitivity of 80 mV peak to peak and a phase margin of 292-degrees at the SONET STS-192 rate of 9.95 Gbit/s. The IC nominally dissipates 870 mW of power, but may be operated up to 10 Gbit/s with a power dissipation of 450 mW. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15 x 1 mm2.

引用

页码：2376 / 2378

页数：3

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