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- [31] ELECTRICAL CONDUCTIVITY AND HALL-EFFECT AT LOW-TEMPERATURES IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1084 - 1091
- [32] SPECTRAL DEPENDENCE OF THE CURRENT-INDUCED ANISOTROPY OF THE REFRACTIVE-INDEX ASSOCIATED WITH HOT-ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 352 - 353
- [34] MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1064 - 1065
- [37] RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 684 - 685
- [38] DETERMINATION OF THE TEMPERATURE OF HOT-ELECTRONS IN N-TYPE INAS BY INTERFERENCE MODULATION OF RADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 967 - 968
- [39] OPTICAL PHONON DISTURBANCES BY HOT-ELECTRONS IN N-TYPE INDIUM-ANTIMONIDE ACTA PHYSICA AUSTRIACA, 1973, 37 (03): : 259 - 269