ZN1-XMNXSE EPITAXIAL LAYERS AND ZNSE/MNSE HETEROSTRUCTURES GROWN BY PULSED-LASER DEPOSITION

被引：2

作者：

MISIEWICZ, J ^{[1
]}

HUBER, C ^{[1
]}

HEIMAN, D ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

PULSED LASER DEPOSITION; ZNSE/MNSE HETEROSTRUCTURES; ZNMNSE EPILAYERS; MAGNETIC ORDERING;

D O I：

10.7567/JJAPS.32S3.372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn1-xMnxSe epitaxial layers for 0 < x < 0.60 as well as heterostructures ZnSe/MnSe were grown on GaAs(100) substrates by pulsed laser deposition technique. A Nd:YAG pulsed laser and high vacuum chamber were used. The high-quality of the materials obtained was confirmed by X-ray diffraction patterns, Auger electron spectroscopy and Raman backscattering measurements. The low temperature magnetization was measured indicating a new magnetic ordering in the layers.

引用

页码：372 / 374

页数：3

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