Spin-Dependent Electron Tunneling in ZnSe/Zn1-xMnxSe Heterostructures with Double δ-Potentials

被引：0
|
作者：
L.Bruno Chandrasekar [1 ,2 ]
M.Karunakaran [2 ]
K.Gnanasekar [1 ]
机构：
[1] Department of Physics, The American College  2. Department of Physics, Alagappa Govt. Arts College
来源：
Communications in Theoretical Physics | 2019年 / 71卷 / 03期
关键词：
matrix method; heterostructure; δ-potential;
D O I：
暂无
中图分类号：
O471 [半导体理论];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure. The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons. The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value. Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure. The increasing magnetic field enhances the spin-polarization.
引用
收藏
页码：339 / 343
页数：5
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