Effects of Rashba spin-orbit interaction on spin-dependent resonant tunneling in ZnSe/Zn1-xMnxSe multilayer heterostructures

被引：11
|
作者：
Gnanasekar, K.
Navaneethakrishnan, K. [1 ]
机构：
[1] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
[2] Amer Coll, Madurai 625002, Tamil Nadu, India
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 35卷 / 01期
关键词：
spin-polarized transport; spin injection; Rashba spin-orbit coupling; resonant tunneling; diluted magnetic semiconductors;
D O I：
10.1016/j.physe.2006.06.012
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the effects of external electric field-induced Rashba spin-orbit interaction (SOI) on the spin-dependent resonant tunneling through ZnSe/Zn1-xMnxSe heterostructure with double paramagnetic layers in the presence of a magnetic field. Our investigations show a four-fold enhancement of the polarization of the spin-dependent current densities due to the electric field-induced Rashba SOI. These features could be used in the design and fabrication of spin-dependent microelectronic and optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：103 / 109
页数：7
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