Characterization of epitaxial ZnSe films grown by pulsed laser deposition

被引：0
|
作者：
Ganguli, T [1 ]
Ingale, A [1 ]
Vedvyas, M [1 ]
Bhattacharya, P [1 ]
Kukreja, LM [1 ]
Adhi, KP [1 ]
Rustagi, KC [1 ]
机构：
[1] Ctr Adv Technol, Nonlinear Opt Grp, Indore 452013, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial films of ZnSe have been deposited by Pulsed Laser Deposition (PLD) on (100) GaAs. It has been observed that the best epitaxy is obtained at a deposition temperature of 400 degrees C. Photoluminescence (P.L) spectra shows that there is a five fold increase in the band-edge luminescence when the deposition temperature is increased from 350 degrees C to 400 degrees C.
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页码：1181 / 1184
页数：4
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