PULSED-LASER DEPOSITION OF EPITAXIAL LAYERS OF ZNSE

被引：8
|
作者：
DEISS, JL
CHERGUI, A
KOUTTI, L
LOISON, JL
ROBINO, M
GRUN, JB
机构：
[1] Institut de Physique et Chimie des Matériaux de Strasbourg, Groupe d'Optique Nonlinéaire et d'Optoélectronique, Unité Mixte 380046, 67037 Strasbourg Cedex, 23, rue du Loess
来源：
APPLIED SURFACE SCIENCE | 1995年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)00406-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We study the key parameters for pulsed laser deposition of ZnSe layers on (100) GaAs or (111) CaF2 substrates. The crystalline and optical properties of these epilayers are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford back scattering (RES) and by optical spectroscopy. The ZnSe layers obtained are compared to epilayers prepared by metal organic chemical vapor deposition (MOCVD).
引用
收藏
页码：149 / 153
页数：5
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