ELECTROLYTE ELECTROREFLECTANCE STUDY OF ION-DAMAGED LASER-ANNEALED SILICON

被引：0
|
作者：
POLLAK, FH
TSU, R
MENDEZ, E
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] CUNY BROOKLYN COLL,BROOKLYN,NY 11210
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：312 / 312
页数：1
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