PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON

被引：137
|
作者：
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
机构：
[1] ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
[2] UNIV ILLINOIS,SCH CHEM SCI,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 05期
关键词：
D O I：
10.1063/1.90046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：276 / 278
页数：3
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