RELATIONSHIPS OF ELECTRICAL-PROPERTIES AND MELTING THRESHOLD IN LASER-ANNEALED ION-IMPLANTED SILICON

被引：5
|
作者：
WANG, KL [1 ]
LIU, YS [1 ]
BURMAN, C [1 ]
机构：
[1] SUNY ALBANY,ALBANY,NY 12222
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期
关键词：
D O I：
10.1063/1.91094
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：263 / 265
页数：3
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