ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON

被引：19
|
作者：
ROULET, ME [1 ]
DUTOIT, M [1 ]
LUTHY, W [1 ]
AFFOLTER, K [1 ]
机构：
[1] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期
关键词：
D O I：
10.1063/1.92064
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：737 / 739
页数：3
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