A NEW TECHNIQUE FOR MEASURING LATERAL DISTRIBUTION OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：24

作者：

CHEN, WL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples will be shown for hot-carrier stressed MOS transistors.

引用

页码：393 / 395

页数：3

共 50 条

[41] CHARACTERIZATION OF THE ANODIC INP-OXIDE INTERFACE VIA A NEW TECHNIQUE MEASURING TRANSIENT CHARGES
GARRIGUES, M
ZENCIRCI, N
MAHDJOUB, A
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 271 - 272
[42] A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
Ang, DS
Ling, CH
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (01) : 23 - 25
[43] Development of a new chip-based technique for measuring the lateral electric field near a skin wound
Isseroff, R
Mukerjee, EV
Collins, SD
Smith, RL
Nuccitelli, R
JOURNAL OF INVESTIGATIVE DERMATOLOGY, 2002, 119 (01) : 280 - 280
[44] New charge pumping technique for measuring Si/SiO2 interface states in MOS devices
Xinjiang Inst of Physics, The Chinese Acad of Sciences, Urumqi, China
Pan Tao Ti Hsueh Pao, 5 (344-349):
[45] Applicability of Charge Pumping Technique for Evaluating the Effect of Interface Traps in Junctionless Nanowire Transistors
Fonte, E. T.
Trevisoli, R.
Doria, R. T.
2019 34TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2019), 2019,
[46] A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique
Mahapatra, S
Parikh, CD
Rao, VR
Viswanathan, CR
Vasi, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) : 171 - 177
[47] A new charge based compact model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET modeling
Chauhan, Yogesh Singh
Krummenacher, Francois
Gillon, Renuad
Bakeroot, Benoit
Declercq, Michel
Ionescu, Adrian Mihai
20TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: TECHNOLOGY CHALLENGES IN THE NANOELECTRONICS ERA, 2007, : 177 - +
[48] Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
A. É. Atamuratov
D. U. Matrasulov
P. K. Khabibullaev
Doklady Physics, 2010, 55 : 52 - 54
[49] Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
Atamuratov, A. E.
Matrasulov, D. U.
Khabibullaev, P. K.
DOKLADY PHYSICS, 2010, 55 (02) : 52 - 54
[50] Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps
Fiorenza, Patrick
Zignale, Marco
Camalleri, Marco
Scalia, Laura
Zanetti, Edoardo
Saggio, Mario
Giannazzo, Filippo
Roccaforte, Fabrizio
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 169

← 1 2 3 4 5 →