A NEW TECHNIQUE FOR MEASURING LATERAL DISTRIBUTION OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：24

作者：

CHEN, WL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples will be shown for hot-carrier stressed MOS transistors.

引用

页码：393 / 395

页数：3

共 50 条

[31] A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs
He, J
Zhang, X
Huang, A
Huang, R
SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1107 - 1113
[32] Characterization of Interface and Oxide Traps in Ge pMOSFETs based on DCIV Technique
Maji, Debabrata
Crupi, F.
Magnone, P.
Giusi, G.
Pace, C.
Simoen, E.
Rao, V. Ramgopal
2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 153 - +
[33] EVALUATION OF THE 3-LEVEL CHARGE PUMPING TECHNIQUE FOR CHARACTERIZING INTERFACE TRAPS
SAKS, NS
ANCONA, MG
CHEN, WL
APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2261 - 2263
[34] New laboratory technique for measuring the photon charge
Semertzidis, YK
Danby, GT
Lazarus, DM
PHYSICAL REVIEW D, 2003, 67 (01):
[35] Interface traps distribution and temperature-dependent 6H-SiC MOSFET analysis
Kaushik, N
Haldar, S
Gupta, M
Gupta, RS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (01) : 6 - 12
[36] DISTRIBUTION OF CHARGE AND POTENTIAL AT OXIDE-SOLUTION INTERFACE
AHMED, SM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : C230 - &
[37] THE CHARGE DISTRIBUTION AT THE ZINC OXIDE-ELECTROLYTE INTERFACE
DEWALD, JF
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 155 - 161
[38] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
Zhang, Xufang
Okamoto, Dai
Hatakeyama, Tetsuo
Sometani, Mitsuru
Harada, Shinsuke
Iwamuro, Noriyuki
Yano, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)
[39] Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
Wang, TH
Chang, TE
Chiang, LP
Wang, CH
Zous, NK
Huang, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) : 1511 - 1517
[40] Fixed oxide charge, interface traps and border traps in MOS structures, grown on plasma hydrogenated (100)-psi
Halova, E.
Alexandrova, S.
Szekeres, A.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (10): : 1498 - 1501

← 1 2 3 4 5 →