A NEW TECHNIQUE FOR MEASURING LATERAL DISTRIBUTION OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：24

作者：

CHEN, WL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples will be shown for hot-carrier stressed MOS transistors.

引用

页码：393 / 395

页数：3

共 50 条

[21] LATERAL NONUNIFORMITIES (LNU) OF OXIDE AND INTERFACE STATE CHARGE
MASERJIAN, J
ZAMANI, N
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 459 - 459
[22] A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY
HUANG, CL
FARICELLI, JV
ARORA, ND
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (06) : 1134 - 1139
[23] Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures
Seo, M. W.
Kwak, D. W.
Cho, W. S.
Park, C. J.
Kim, W. S.
Cho, H. Y.
THIN SOLID FILMS, 2008, 517 (01) : 245 - 247
[24] Si-SiO2 interface charge traps characterization by charge pumping technique
Jastrzebski, C.
Strzalkowski, I.
Bakowski, A.
Electron Technology (Warsaw), 28 (1-2):
[25] A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Mahapatra, S
Parikh, CD
Vasi, J
Rao, VR
Viswanathan, CR
SOLID-STATE ELECTRONICS, 1999, 43 (05) : 915 - 922
[26] ELECTROCHEMICAL PHOTOCONDUCTIVE TECHNIQUE FOR MEASURING THE DISTRIBUTION OF TRAPS IN SEMIINSULATING GAAS
SEARS, WM
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3148 - 3154
[27] An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current
Zhang, Chenfei
Ma, Chenyue
Xu, Jiaojiao
Wang, Ruonan
Zhao, Xiaojin
Gu, Xin
Zhang, Xiufang
Wu, Wen
Wang, Wenping
Zhao, Wei
Ma, Yong
Wang, Ruonan
Zhang, Dongwei
Bian, Wei
Yang, Guozeng
Yan, Zhang
Liu, Zhiwei
Ma, Yong
He, Jin
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2, 2011, : 180 - 183
[28] LATERAL DISTRIBUTION OF HOT-CARRIER-INDUCED INTERFACE TRAPS IN MOSFETS
ANCONA, MG
SAKS, NS
MCCARTHY, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2221 - 2228
[29] A NEW TRANSIENT CAPACITANCE TECHNIQUE FOR THE DETERMINATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
VITANOV, P
EISELE, I
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5227 - 5230
[30] A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
Li, HH
Chu, YL
Wu, CY
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (05) : 782 - 791

← 1 2 3 4 5 →