SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY

被引：11

|

作者：

BRANTLEY, WA

QUEISSER, HJ

HWANG, CJ

DAWSON, LR

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1098(72)90930-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1141 / &

相关论文

共 50 条

[31] MOSSBAUER-SPECTROSCOPY OF SN-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
WILLIAMSON, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3466 - 3472
[32] A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
K. S. Zhuravlev
T. S. Shamirzaev
N. A. Yakusheva
I. P. Petrenko
[J]. Semiconductors, 1998, 32 : 1057 - 1061
[33] INVESTIGATION OF HIGH-QUALITY GAAS-IN LAYERS GROWN BY LIQUID-PHASE EPITAXY
MILANOVA, M
CHOLAKOVA, T
BEDIKJAN, L
STANEV, N
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (11) : 1235 - 1237
[34] SELECTIVE LIQUID-PHASE EPITAXY AND DEFECT REDUCTION IN GAAS GROWN ON GAAS-COATED SILICON BY MOLECULAR-BEAM EPITAXY
SAKAI, S
MATYI, RJ
SHICHIJO, H
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1913 - 1915
[35] LIQUID-PHASE EPITAXY (LPE) OF GAAS IN LOW GRAVITY
LIND, MD
IMMORLICA, AA
KROES, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C137 - C137
[36] LIQUID-PHASE EPITAXY ON CHANNELED (100) GAAS SUBSTRATES
KUHN, G
LUX, M
NOWAK, E
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1986, 21 (08) : K146 - K148
[37] QUARTZ SLIDING BOAT FOR GAAS LIQUID-PHASE EPITAXY
MINDEN, HT
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (01) : 79 - 80
[38] TRANSITION TO FACETING IN MULTILAYER LIQUID-PHASE EPITAXY OF GAAS
SCHEEL, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 70 - 73
[39] DELINEATION OF GAAS JUNCTIONS MADE BY LIQUID-PHASE EPITAXY
ASANO, T
DOI, A
MIGITAKA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 575 - 576
[40] ON THE NATURE OF THE EDGE GROWTH IN LIQUID-PHASE EPITAXY OF GAAS
ZYTKIEWICZ, ZR
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 94 (04) : 919 - 922

← 1 2 3 4 5 →