LIQUID-PHASE EPITAXY ON CHANNELED (100) GAAS SUBSTRATES

被引:0
|
作者
KUHN, G
LUX, M
NOWAK, E
机构
关键词
D O I
10.1002/crat.2170210832
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:K146 / K148
页数:3
相关论文
共 50 条
  • [1] LIQUID-PHASE EPITAXY OVER CHANNELED SUBSTRATES
    BOTEZ, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 150 - 154
  • [2] LIQUID-PHASE EPITAXY OF GAAS ON SI SUBSTRATES
    BROVKIN, VN
    KAZAKOV, AI
    PRESNOV, VA
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (10-11) : 1331 - 1336
  • [3] FINAL TREATMENT OF GAAS AND GAP SUBSTRATES FOR LIQUID-PHASE EPITAXY
    ANNAEVA, AR
    BERKELIEV, AB
    KONAKOVA, RV
    PROKOPENKO, IV
    [J]. INORGANIC MATERIALS, 1994, 30 (03): : 306 - 308
  • [4] Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy
    Sugai, Maki
    Kochiya, Toshio
    Oyama, Yutaka
    Nizhizawa, Jun-Ichi
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 411 - 414
  • [5] HETEROEPITAXIAL GROWTH OF GAAS ON (100)GAAS AND INP BY SELECTIVE LIQUID-PHASE EPITAXY
    KIM, DK
    LEE, BT
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5870 - 5874
  • [6] LIQUID-PHASE EPITAXY OF GAALAS ON GAAS SUBSTRATES WITH FINE SURFACE CORRUGATIONS
    NAKAMURA, M
    AIKI, K
    UMEDA, J
    YARIV, A
    YEN, HW
    MORIKAWA, T
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 466 - 468
  • [7] GAAS-LAYERS GROWN ON 100-MM DIAMETER SUBSTRATES IN A LIQUID-PHASE EPITAXY CENTRIFUGE
    KONUMA, M
    SILIER, I
    CZECH, E
    BAUSER, E
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 829 - 830
  • [8] LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES
    KONUMA, M
    CZECH, E
    SILIER, I
    BAUSER, E
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (02) : 205 - 207
  • [9] LIQUID-PHASE EPITAXY OF GAAS AND ALGAAS
    PEEV, NS
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) : 499 - 503
  • [10] Epitaxial lateral overgrowth of Si on (100)Si substrates by liquid-phase epitaxy
    Weber, KJ
    Catchpole, K
    Blakers, AW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) : 369 - 374