LIQUID-PHASE EPITAXY OF GAALAS ON GAAS SUBSTRATES WITH FINE SURFACE CORRUGATIONS

被引：22

作者：

NAKAMURA, M

AIKI, K

UMEDA, J

YARIV, A

YEN, HW

MORIKAWA, T

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

[2] CALTECH, PASADENA, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：466 / 468

页数：3

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