LEAKAGE CURRENTS IN SOI MOSFETS

被引：5

作者：

ANNAMALAI, NK ^{[1
]}

BIWER, MC ^{[1
]}

机构：

[1] NORTHEASTERN UNIV,DEPT ELECT & COMP ENGN,BOSTON,MA 02115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

Dosimetry - Semiconducting Silicon - Substrates;

D O I：

10.1109/23.25467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-dose response of both NMOS and PMOS FETs fabricated on SOI substrates was studied. Two types of back-channel leakage currents were identified. A back-channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back-channel leakage due to MOSFET action varies with the substrate bias and varies with irradiation due to the threshold voltage shift. The soft reverse characteristics are a function of drain-body voltage and vary with substrate bias and irradiation. I-V characteristics and subthreshold currents of both front and back channels as a function of total dose were obtained.

引用

页码：1372 / 1378

页数：7

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