Investigation of SOI MOSFETs with ultimate thickness

被引：1
|
作者：
Ernst, T. [1 ,3 ]
Munteanu, D. [1 ]
Cristoloveanu, S. [1 ]
Ouisse, T. [1 ]
Horiguchi, S. [2 ]
Ono, Y. [2 ]
Takahashi, Y. [2 ]
Murase, K. [2 ]
机构：
[1] LPCS/ENSERG, 23 Rue des Martyrs, BP 257, 38016 Grenoble Cedex, France
[2] NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-0198, Japan
[3] STMicroelectronics, 38920 Crolles, France
来源：
Microelectronic Engineering | 1999年 / 48卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：339 / 342
相关论文
共 50 条
  • [1] Investigation of SOI MOSFETs with ultimate thickness
    Ernst, T
    Munteanu, D
    Cristoloveanu, S
    Ouisse, T
    Horiguchi, S
    Ono, Y
    Takahashi, Y
    Murase, K
    MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 339 - 342
  • [2] Investigation of Random Telegraph Signal with PD SOI MOSFETs
    Chen, Ching-En
    Chang, Ting-Chang
    Lo, Hung-Ping
    Ho, Szu-Han
    Lo, Wen-Hung
    Tseng, Tseung-Yuen
    Cheng, Osbert
    Huang, Cheng Tung
    DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 261 - 271
  • [3] Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-κ Insulators
    Garcia Ruiz, Francisco J.
    Maria Tienda-Luna, Isabel
    Godoy, Andres
    Donetti, Luca
    Gamiz, Francisco
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (11) : 2711 - 2719
  • [4] Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
    Schmidt, M.
    Lemme, M. C.
    Gottlob, H. D. B.
    Driussi, F.
    Selmi, L.
    Kurz, H.
    SOLID-STATE ELECTRONICS, 2009, 53 (12) : 1246 - 1251
  • [5] Fully depleted n-MOSFETs on supercritical thickness strained SOI
    Lauer, I
    Langdo, TA
    Cheng, ZY
    Fiorenza, JG
    Braithwaite, G
    Currie, AT
    Leitz, CW
    Lochtefeld, A
    Badawi, H
    Bulsara, MT
    Somerville, M
    Antoniadis, DA
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 83 - 85
  • [6] Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs
    Su, Elizabeth Mei-hua
    Hong, David Chuyang
    Cristoloveanu, Sorin
    Taur, Yuan
    MICROELECTRONIC ENGINEERING, 2021, 238
  • [7] Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs
    Tsutsui, G
    Saitoh, M
    Nagumo, T
    Hiramoto, T
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) : 369 - 373
  • [8] Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs
    Noguchi, M
    Numata, T
    Mitani, Y
    Shino, T
    Kawanaka, S
    Oowaki, Y
    Toriumi, A
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (01) : 32 - 34
  • [9] Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping
    Poljak, M.
    Jovanovic, V.
    Suligoj, T.
    2011 IEEE INTERNATIONAL SOI CONFERENCE, 2011,
  • [10] Impact of SOI Thickness Scaling on Alpha-Particle Irradiation Performance of MOSFETs
    Aditya, Kritika
    Saini, Rohit
    Singh, Ramendra
    Jha, Chandan Kumar
    Dixit, Abhisek
    2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2017,
12345