Investigation of SOI MOSFETs with ultimate thickness

被引：1
|
作者：
Ernst, T. [1 ,3 ]
Munteanu, D. [1 ]
Cristoloveanu, S. [1 ]
Ouisse, T. [1 ]
Horiguchi, S. [2 ]
Ono, Y. [2 ]
Takahashi, Y. [2 ]
Murase, K. [2 ]
机构：
[1] LPCS/ENSERG, 23 Rue des Martyrs, BP 257, 38016 Grenoble Cedex, France
[2] NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-0198, Japan
[3] STMicroelectronics, 38920 Crolles, France
来源：
Microelectronic Engineering | 1999年 / 48卷 / 01期
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页码：339 / 342
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