LEAKAGE CURRENTS IN SOI MOSFETS

被引：5
|
作者：
ANNAMALAI, NK [1 ]
BIWER, MC [1 ]
机构：
[1] NORTHEASTERN UNIV,DEPT ELECT & COMP ENGN,BOSTON,MA 02115
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期
关键词：
Dosimetry - Semiconducting Silicon - Substrates;
D O I：
10.1109/23.25467
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total-dose response of both NMOS and PMOS FETs fabricated on SOI substrates was studied. Two types of back-channel leakage currents were identified. A back-channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction. The back-channel leakage due to MOSFET action varies with the substrate bias and varies with irradiation due to the threshold voltage shift. The soft reverse characteristics are a function of drain-body voltage and vary with substrate bias and irradiation. I-V characteristics and subthreshold currents of both front and back channels as a function of total dose were obtained.
引用
收藏
页码：1372 / 1378
页数：7
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