CHARACTERIZATION OF MOCVD GROWN GA1-XALXAS FOR DOUBLE HETEROSTRUCTURE LASERS

被引：0
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作者：
GLEW, RW
GARRETT, B
BRIGGS, ATR
THRUSH, EJ
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 07期
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D O I：
10.1088/0268-1242/3/7/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：701 / 705
页数：5
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