USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS TO STUDY GROWTH OF III-V SEMICONDUCTORS DURING MOLECULAR-BEAM EPITAXY

被引：15

|

作者：

TURCO, F

MASSIES, J

CONTOUR, JP

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 08期

关键词：

D O I：

10.1051/rphysap:01987002208082700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：827 / 836

页数：10

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