REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

ZHANG, X ^{[1
]}

PASHLEY, DW ^{[1
]}

NEAVE, JH ^{[1
]}

FAWCETT, PN ^{[1
]}

ZHANG, J ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT MAT,LONDON SW7 2BP,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90277-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxial (MBE) growth of a 60 angstrom thick InAs layer on GaAs (110) substrate was studied by reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM). The results indicate that 2D island nucleation and coalescence are involved at the initial stage of deposition. Due to the surface geometry, asymmetric strain relief is observed in the InAs film: the relaxation in the [110BAR] direction is almost complete, whereas a minimum of 2.7% strain still remains in the [001] direction. The observation is compared to that of a 60 angstrom InAs layer grown on a GaAs (001) substrate under identical conditions.

引用

页码：331 / 334

页数：4

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