A SILICON HIGH-FREQUENCY BIPOLAR POWER TRANSISTOR

被引：0

作者：

SCHIEKE, P ^{[1
]}

DUPLESSIS, M ^{[1
]}

机构：

[1] UNIV PRETORIA,CARL & EMILY FUCHS INST MICROELECTR,LYNNWOOD RIDGE 0040,SOUTH AFRICA

来源：

SOUTH AFRICAN JOURNAL OF SCIENCE | 1991年 / 87卷 / 3-4期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A silicon high-frequency bipolar transistor has been designed, manufactured and evaluated. Although the transistor has not yet been optimized, preliminary results look promising. A maximum (small-signal) available gain value of above 10 dB was obtained for frequencies up to 1.4 GHz. The design considerations as well as the manufacturing process are discussed, as is an evaluation of the measurements that have been completed.

引用

页码：133 / 134

页数：2

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