Electrostatic discharge failure mechanism of different pin pairs of high-frequency small-power silicon bipolar transistors

Under the action of the model of human body electrostatic discharge(ESD), most sensitive ports of some high-frequency small-power silicon bipolar transistor on model of human body ESD were not the emitter electrode to base electrode reversal junction, which was already well known to people. It was the collect electrode to base electrode reversal junction. So the further microscopic analysis and emulation analysis with computer simulation were carried on respectively. The ESD effects and failure mechanism on typical high-frequency silicon bipolar transistors which were caused by different pins were discussed in details. Each damaged point at different position inside the typical test samples was analyzed one by one. Finally it have been concluded that, when ESD was injected into the CB reversal junction, the insulation medium field induced breakdown at the edge of the base electrode or the emitter electrode of the high-frequency silicon bipolar transistors could make the field effect invalidation, besides the thermal second breakdown happened inside the Base electrode. The thermal second breakdown made the transistors failure immediately, but the field effect could make the ESD latent damage by the slight dielectric breakdown. Both of them influence the transistor's reliability.