A SILICON HIGH-FREQUENCY BIPOLAR POWER TRANSISTOR

被引：0

作者：

SCHIEKE, P ^{[1
]}

DUPLESSIS, M ^{[1
]}

机构：

[1] UNIV PRETORIA,CARL & EMILY FUCHS INST MICROELECTR,LYNNWOOD RIDGE 0040,SOUTH AFRICA

来源：

SOUTH AFRICAN JOURNAL OF SCIENCE | 1991年 / 87卷 / 3-4期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A silicon high-frequency bipolar transistor has been designed, manufactured and evaluated. Although the transistor has not yet been optimized, preliminary results look promising. A maximum (small-signal) available gain value of above 10 dB was obtained for frequencies up to 1.4 GHz. The design considerations as well as the manufacturing process are discussed, as is an evaluation of the measurements that have been completed.

引用

页码：133 / 134

页数：2

共 50 条

[31] Thermoelectric models of high-power bipolar semiconductor devices. Part I. Model of a high-frequency transistor with defects
V. A. Sergeev
A. M. Khodakov
Journal of Communications Technology and Electronics, 2015, 60 : 1141 - 1146
[32] High-frequency transistor amplifier analysis
Nayaka, CSM
IEEE TRANSACTIONS ON EDUCATION, 2006, 49 (01) : 58 - 60
[33] A HIGH-FREQUENCY REPRESENTATION OF MOS TRANSISTOR
JOHNSON, H
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12): : 1970 - +
[34] A Novel High-Frequency Bipolar Pulsed Power Generator for Biological Applications
Zeng, Weirong
Yu, Liang
Dong, Shoulong
Ma, Jianhao
Wang, Yilin
He, Yingjiang
Wang, Xiaoyu
Yao, Chenguo
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (12) : 12861 - 12870
[35] HIGH-FREQUENCY POWER ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
CAMPS, T
BAILBE, JP
MARTY, A
TASSELLI, J
CAZARRE, A
ELECTRONICS LETTERS, 1992, 28 (15) : 1444 - 1445
[36] High frequency bipolar junction transistor modeling
Xu, DQ
Branner, GR
40TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2, 1998, : 585 - 587
[37] A review of SiC static induction transistor development for high-frequency power amplifiers
Sung, YM
Casady, JB
Dufrene, JB
Agarwal, AK
SOLID-STATE ELECTRONICS, 2002, 46 (05) : 605 - 613
[38] A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCY PERFORMANCE FOR DEVICE DESIGN
KHRENOV, G
RYZHII, V
KARTASHOV, S
COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1994, 13 (04) : 671 - 676
[39] High-frequency analysis of SOI Lateral Bipolar Transistor (LBT) structure for RE analog applications
Suligoj, T
Koricic, M
Biljanovic, P
ICES 2002: 9TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-111, CONFERENCE PROCEEDINGS, 2002, : 1191 - 1194
[40] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION
ANKRI, D
SCAVENNEC, A
BESOMBES, C
COURBET, C
HELIOT, F
RIOU, J
APPLIED PHYSICS LETTERS, 1982, 40 (09) : 816 - 818

← 1 2 3 4 5 →