HIGH-SPEED MODULATION WITH LOW-THRESHOLD 1.3-MU-M-WAVELENGTH MQW LASER-DIODES

被引:0
|
作者
TANAKA, K
NAKAJIMA, K
ODAGAWA, T
NOBUHARA, H
WAKAO, K
机构
关键词
SEMICONDUCTOR LASER; MQW; LOW THRESHOLD CURRENT; HIGH-SPEED MODULATION; ZERO-BIAS MODULATION; LASING DELAY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Laser diodes for optical interconnections are ideally high speed, work over a wide temperature range, and are simple to bias. This paper reports high bit-rate modulation with nearly zero bias with very low threshold 1.3 mum-wavelength laser diodes over a wide temperature range. At the high temperature of 80-degrees-C, lasing delay was 165 ps with nearly zero bias. We demonstrated 2.5 Gbit/s modulation over a wide temperature range. Eye opening was over 34% of one time slot.
引用
收藏
页码:91 / 93
页数:3
相关论文
共 50 条
  • [21] LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M
    KAMINOW, IP
    STULZ, LW
    KO, JS
    DENTAI, AG
    NAHORY, RE
    DEWINTER, JC
    HARTMAN, RL
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1312 - 1319
  • [22] The direct extraction of the model parameters for the high-speed low-threshold semiconductor laser
    Gao, JJ
    Gao, BX
    Liang, CG
    1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III, 1997, : 569 - 571
  • [23] EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP/INP COMPRESSIVE-STRAINED-MQW LASERS
    UOMI, K
    TSUCHIYA, T
    KOMORI, M
    OKA, A
    SHINODA, K
    OISHI, A
    ELECTRONICS LETTERS, 1994, 30 (24) : 2037 - 2038
  • [24] 1.3-mu m strained MQW-DFB lasers with extremely low intermodulation distortion for high-speed analog transmission
    Watanabe, H
    Aoyagi, T
    Takemoto, A
    Takiguchi, T
    Omura, E
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) : 1015 - 1023
  • [25] HIGH-SPEED COMPLEX-COUPLED DFB LASER AT 1.3-MU-M
    CHEN, TR
    CHEN, PC
    UNGAR, J
    BARCHAIM, N
    ELECTRONICS LETTERS, 1994, 30 (13) : 1055 - 1057
  • [26] HIGH-SPEED 1.3-MU-M DFB LASER WITH MODIFIED DCPBH STRUCTURE
    WUNSTEL, K
    MOZER, A
    SCHILLING, M
    LUZ, G
    LOSCH, K
    SCHWEIZER, H
    SCHEMMEL, G
    HILDEBRAND, O
    ELECTRONICS LETTERS, 1986, 22 (21) : 1144 - 1145
  • [27] PICOSECOND SPECTROSCOPY OF OPTICALLY MODULATED HIGH-SPEED LASER-DIODES
    SUTTER, DH
    SCHNEIDER, H
    WEISSER, S
    RALSTON, JD
    LARKINS, EC
    APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1809 - 1811
  • [28] PLASMA-HYDROGENATED LOW-THRESHOLD WIDEBAND 1.3-MU-M BURIED RIDGE STRUCTURE LASER
    KAZMIERSKI, C
    THEYS, B
    ROSE, B
    MIRCEA, A
    JALIL, A
    CHEVALLIER, J
    ELECTRONICS LETTERS, 1989, 25 (21) : 1433 - 1435
  • [29] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT
    KRESSEL, H
    ETTENBERG, M
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3533 - 3537
  • [30] OPTIMIZATION OF STRIPE WIDTH FOR LOW-THRESHOLD OPERATION OF QUANTUM-WELL LASER-DIODES
    OSINSKI, JS
    DZURKO, KM
    HUMMEL, SG
    DAPKUS, PD
    APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2487 - 2489