GATE OXIDE QUALITY OF DRAM TRENCH CAPACITORS

被引：0
|
作者：
ROHL, S
ENGELHARDT, M
KELLNER, WU
SCHLEMM, A
机构：
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：283 / 286
页数：4
相关论文
共 50 条
  • [41] An oxide filled extended trench gate super junction MOSFET structure
    Wang Cai-Lin
    Sun Jun
    CHINESE PHYSICS B, 2009, 18 (03) : 1231 - 1236
  • [42] Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs
    Ariyoshi, K.
    Harada, S.
    Senzaki, J.
    Kojima, T.
    Kojima, K.
    Tanaka, Y.
    Shinohe, T.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 615 - 618
  • [43] THE EFFECT OF TRENCH-GATE OXIDE STRUCTURE ON EPROM DEVICE OPERATION
    CHU, SSD
    STECKL, AJ
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 284 - 286
  • [44] FUNDAMENTAL LIMITATIONS ON DRAM STORAGE CAPACITORS
    NOBLE, WP
    WALKER, WW
    IEEE CIRCUITS & DEVICES, 1985, 1 (01): : 45 - 51
  • [45] An oxide filled extended trench gate super junction MOSFET structure
    王彩琳
    孙军
    ChinesePhysicsB, 2009, 18 (03) : 1231 - 1236
  • [46] FUNDAMENTAL LIMITATIONS ON DRAM STORAGE CAPACITORS
    NOBLE, WP
    WALKER, WW
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 156 - 161
  • [47] Trends in the development of ULSI DRAM capacitors
    Fazan, Pierre C.
    Integrated Ferroelectrics, 1994, 4 (3 pt 2) : 247 - 256
  • [48] Oxide-nitride storage dielectric formation in a single-furnace process for trench DRAM
    Wu, Yung-Hsien
    Chang, Ian
    Wang, Chun-Yao
    Kao, Tony
    Kuo, Chia-Ming
    Ku, Alex
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) : 734 - 736
  • [49] GATE OXIDE EFFECT ON WAFER LEVEL RELIABILITY OF NEXT GENERATION DRAM TRANSISTORS
    Shin, Yu Gyun
    Nam, Kab-Jin
    Hwang, Heedon
    Han, Jeong Hee
    Hyun, Sangjin
    Choi, Siyoung
    Moon, Joo-Tae
    2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 282 - 286
  • [50] Correlation of gate oxide reliability and product tests on leading edge DRAM technology
    Aichmayr, G
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1389 - 1393
12345