共 50 条
- [31] Iterative approximation for the charge-storage capacity of MOS capacitors with an application to DRAM trench capacitor memory cells Perry, Reginald J., 1600, IEEE, Piscataway, NJ, United States (42):
- [32] Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 181 - 187
- [36] Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 440 - +
- [37] Characterization of Electron Traps in Gate Oxide of SiC MOS Capacitors 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
- [38] Correlation between gate oxide reliability and the profile of the trench top corner in Shallow Trench Isolation (STI) IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 747 - 750
- [39] Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 537 - 540
- [40] Low Equivalent Oxide Thickness TiO2 Based Capacitors for DRAM Application ATOMIC LAYER DEPOSITION APPLICATIONS 7, 2011, 41 (02): : 73 - 77