BE INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS - EVIDENCE OF NONRADIATIVE BEHAVIOR BY CATHODOLUMINESCENCE AND ELECTRON ACOUSTIC MEASUREMENTS

被引:12
|
作者
BRESSE, JF
PAPADOPOULO, AC
机构
关键词
D O I
10.1063/1.98916
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:183 / 185
页数:3
相关论文
共 50 条
  • [21] EVIDENCE OF ISOVALENT IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LEROUX, M
    NEU, G
    CONTOUR, JP
    MASSIES, J
    VERIE, C
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2996 - 2998
  • [22] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY
    ITO, H
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1760 - L1762
  • [23] IN INCORPORATION IN GAINAS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2911 - 2913
  • [24] HEAVILY SILICON DOPED INGAALAS/INP EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    RAMAM, A
    CHUA, SJ
    KARUNASIRI, G
    VAYA, PR
    JOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) : 186 - 190
  • [25] PHOTOREFLECTANCE MEASUREMENTS ON SI DELTA-DOPED GAAS SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY
    BERNUSSI, AA
    IIKAWA, F
    MOTISUKE, P
    BASMAJI, P
    LI, MS
    HIPOLITO, O
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4149 - 4151
  • [26] HALL MEASUREMENTS ON SELECTIVELY DOPED INSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(001)
    SONGPONGS, P
    ANDERSSON, TG
    EKENSTEDT, MJ
    SODERSTROM, JR
    CUMMING, MM
    APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1433 - 1435
  • [27] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY
    QIU, J
    DEPUYDT, JM
    CHENG, H
    HAASE, MA
    APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2992 - 2994
  • [28] ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MCLEVIGE, WV
    VAIDYANATHAN, KV
    STREETMAN, BG
    ILEGEMS, M
    COMAS, J
    PLEW, L
    APPLIED PHYSICS LETTERS, 1978, 33 (02) : 127 - 129
  • [29] SN-DOPED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    FUJII, T
    SUZUKI, H
    HIYAMIZU, S
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (04): : 121 - 130
  • [30] RAMAN-SCATTERING FROM HEAVILY DOPED (311) GAAS-SI GROWN BY MOLECULAR-BEAM EPITAXY
    KWOK, SH
    MERLIN, R
    LI, WQ
    BHATTACHARYA, PK
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 285 - 286