BE INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS - EVIDENCE OF NONRADIATIVE BEHAVIOR BY CATHODOLUMINESCENCE AND ELECTRON ACOUSTIC MEASUREMENTS

被引：12
|
作者：
BRESSE, JF
PAPADOPOULO, AC
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 03期
关键词：
D O I：
10.1063/1.98916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：183 / 185
页数：3
相关论文
共 50 条
  • [1] HEAVILY SE SPIKE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    NOTARI, AC
    SCHRAPPE, B
    BASMAJI, P
    HIPOLITO, O
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 518 - 520
  • [2] GAAS HEAVILY DOPED WITH BE, PREPARED BY MOLECULAR-BEAM EPITAXY
    ZHURAVLEV, KS
    LUBYSHEV, DI
    MIGAL, VP
    PREOBRAZHENSKII, VV
    STENIN, SI
    TEREKHOV, SA
    INORGANIC MATERIALS, 1990, 26 (09) : 1690 - 1691
  • [3] INFLUENCE OF AS4/GA FLUX RATIO ON BE INCORPORATION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    PAO, YC
    FRANKLIN, J
    HARRIS, JS
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 301 - 304
  • [4] MINORITY ELECTRON LIFETIMES IN HEAVILY DOPED P-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ITO, H
    FURUTA, T
    ISHIBASHI, T
    APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2936 - 2938
  • [5] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LIU, DG
    FAN, JC
    LEE, CP
    CHANG, KH
    LIOU, DC
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 608 - 614
  • [6] UNINTENTIONAL INDIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MYERS, DR
    DAWSON, LR
    KLEM, JF
    BRENNAN, TM
    HAMMONS, BE
    SIMONS, DS
    COMAS, J
    PELLEGRINO, J
    APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2321 - 2323
  • [7] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy
    Chavanapranee, Tosaporn
    Ichiryu, Dai
    Horikoshi, Yoshiji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A): : 4921 - 4925
  • [8] SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    LEK, AW
    LAU, EH
    THIN SOLID FILMS, 1993, 235 (1-2) : 1 - 5
  • [9] HEAVILY SI-DOPED GAAS AND ALAS/N-GAAS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    OGAWA, M
    BABA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L572 - L574
  • [10] HEAVILY DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY IN VACUUM
    KUZNETSOV, VP
    ANDREEV, AY
    KUZNETSOV, OA
    NIKOLAEVA, LE
    ZOTOVA, TM
    GUDKOVA, NV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 127 (02): : 371 - 376
12345