ION IMPLANTATION DOPING OF SILICON FOR SHALLOW JUNCTIONS

被引：0
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作者：
FAIRFIELD, JM
CROWDER, BL
机构：
来源：
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME | 1969年 / 245卷 / 03期
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中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
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页码：469 / +
页数：1
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