ION IMPLANTATION DOPING OF SILICON FOR SHALLOW JUNCTIONS

被引:0
|
作者
FAIRFIELD, JM
CROWDER, BL
机构
来源
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:469 / +
页数:1
相关论文
共 50 条
  • [41] Si and Mg Ion Implantation for Doping of GaN Grown on Silicon
    Coig, M.
    Lardeau-Falcy, A.
    Sacher, N.
    Kanyandekwe, J.
    Huvelin, A.
    Biscarrat, J.
    Vilain, E.
    Milesi, F.
    Mazen, F.
    2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 70 - 73
  • [42] CONTROLLED GOLD DOPING OF SILICON BY USING ION-IMPLANTATION
    SCHULZ, M
    GOETZBERGER, A
    FRANZ, I
    LANGHEINRICH, W
    APPLIED PHYSICS, 1974, 3 (04): : 275 - 280
  • [43] DOPING OF AMORPHOUS-SILICON BY POTASSIUM-ION IMPLANTATION
    DESALVO, A
    ZIGNANI, F
    GALLONI, R
    RIZZOLI, R
    RUTH, M
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1993, 67 (01): : 131 - 142
  • [44] Using boron cluster ion implantation to fabricate ultra-shallow junctions
    Jacobson, D
    FIFTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2005, : 23 - 26
  • [45] Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions
    Cheng, LW
    Cheng, SL
    Chen, JY
    Chen, LJ
    Tsui, BY
    THIN SOLID FILMS, 1999, 355 : 412 - 416
  • [46] Charge exchange cross sections relevant to ion implantation for ultra shallow junctions
    van den Berg, JA
    Wostenholm, G
    Geryk, M
    Armour, DG
    Cook, CEA
    Murrell, AJ
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 627 - 630
  • [47] Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon
    Lu, XM
    Shao, L
    Wang, XM
    Liu, JR
    Chu, WK
    Bennett, J
    Larson, L
    Ling, PC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 992 - 994
  • [48] Ultra-shallow junction formation in silicon using ion implantation
    Univ of Texas, Austin, United States
    Nucl Instrum Methods Phys Res Sect B, 1-4 (177-183):
  • [49] Ultra-shallow junction formation in silicon using ion implantation
    Tasch, AF
    Banerjee, SK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4): : 177 - 183
  • [50] Monte Carlo simulation of ion implantation for doping of strained silicon MOSFETs
    Wittmann, R
    Hössinger, A
    Selberherr, S
    SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2005, : 191 - 194