MAGNETORESISTANCE AND MAGNETIC-PROPERTIES OF NIFE/OXIDE/CO JUNCTIONS PREPARED BY MAGNETRON SPUTTERING

被引：54

作者：

PLASKETT, TS ^{[1
]}

FREITAS, PP ^{[1
]}

BARRADAS, NP ^{[1
]}

DASILVA, MF ^{[1
]}

SOARES, JC ^{[1
]}

机构：

[1] INETI,P-2685 SACAVEM,PORTUGAL

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.358319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NiFe/oxide/Co junctions were fabricated by magnetron sputtering for studies of polarized electron transport across the insulating barrier. Al 2O3, Al-Al2O3, and MgO insulating barriers were prepared with junction resistances from 0.5 to 116 Ω. The I-V characteristics at room temperature are linear. For low barrier resistance, the magnetoresistance of the structure is dominated by the anisotropic magnetoresistance of the ferromagnetic electrodes. For the higher barrier resistances, a different magnetoresistance effect is observed, which is tentatively related to tunneling or spin-valve effects across the insulating junction.

引用

页码：6104 / 6106

页数：3

共 50 条

[21] Thermochromic properties of vanadium oxide films prepared by dc reactive magnetron sputtering
Cui, Hai-Ning
Teixeira, Vasco
Meng, Li-Jian
Wang, Rong
Gao, Jin-Yue
Fortunato, Elvira
THIN SOLID FILMS, 2008, 516 (07) : 1484 - 1488
[22] Ellipsometric study of the optical properties of silver oxide prepared by reactive magnetron sputtering
Qiu, JH
Zhou, P
Gao, XY
Yu, JN
Wang, SY
Li, J
Zheng, YX
Yang, YM
Song, QH
Chen, LY
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 : S269 - S275
[23] Low-field giant magnetoresistance in (111)-textured Co/Au multilayers prepared with magnetron sputtering
Stavroyiannis, S
Christides, C
Niarchos, D
Kehagias, T
Komninou, P
Karakostas, T
JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6221 - 6228
[24] Optical, structural and electrical properties of tin oxide films prepared by magnetron sputtering
Karapatnitski, IA
Mit', KA
Mukhamedshina, DM
Beisenkhanov, NB
SURFACE & COATINGS TECHNOLOGY, 2002, 151 : 76 - 81
[25] Optical properties of bismuth oxide thin films prepared by reactive magnetron sputtering
Leontie, L.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (03): : 1221 - 1224
[26] Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering
Yoshimura, K
Miki, T
Tanemura, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : 2982 - 2985
[27] The structural and electrochemical properties of tin oxide films prepared by RF magnetron sputtering
Cai, Minzhen
Song, Jie
Zhang, Liangtang
Wu, Qihui
Wu, Suntao
THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
[28] Microstructure and electrical properties of magnetic tunneling junctions: Ta/NiFe/IrMn/M/Al-oxide/M/NiFe (M = Co, NiFe, CoFe)
Chang, PJ
Lee, JH
Youn, SG
Yoon, CS
Kim, CK
Song, O
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 86 (01): : 48 - 52
[29] Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering
卓世异
熊予莹
顾敏
半导体学报, 2009, 30 (05) : 14 - 17
[30] Properties of InN films prepared by magnetron sputtering
Saito, Nobuo
Y., Igasaki
Shinku/Journal of the Vacuum Society of Japan, 1999, 42 (03): : 272 - 274

← 1 2 3 4 5 →